Experimental determination of hot-carrier scattering processes in AlxGa1−xAs
- 24 August 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (8) , 605-607
- https://doi.org/10.1063/1.98361
Abstract
The initial relaxation of hot electrons in Al0.35Ga0.65As has been measured using optical transmission-correlation spectroscopy. In order to determine the contributions of distinct scattering processes, the kinetic energy of the photoexcited carriers was varied by temperature tuning the band gap of the material. We obtain the rates of intervalley scattering, carrier-carrier scattering, and polar phonon emission from the measured decays. When scattering to the satellite (L and X) valleys is energetically possible, this process dominates the relaxation.Keywords
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