Wide-temperature-range operation of 1.3-?m beam expander-integrated laser diodes grown by in-plane thickness control MOVPE using a silicon shadow mask
- 1 April 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 8 (4) , 479-481
- https://doi.org/10.1109/68.491089
Abstract
A new fabrication method of high-quality thickness-tapered semiconductor waveguides is proposed based on controlling in-plane thickness during MOVPE by using a comb-shaped silicon shadow mask. It was used to fabricate a 1.3-μm-wavelength narrow-beam (less than 13/spl deg/) InGaAsP-InP laser diode, which achieved high-power (over 20 mW) operation up to 85.Keywords
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