An Advanced Empirical MESFET Model for Use in Nonlinear Simulation
- 1 October 1992
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Statistical modeling of GaAs MESFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- State-of-the-art harmonic-balance simulation of forced nonlinear microwave circuits by the piecewise techniqueIEEE Transactions on Microwave Theory and Techniques, 1992
- Large‐signal modeling and simulation of GaAs‐MESFETs and HFETsInternational Journal of Microwave and Millimeter-Wave Computer-Aided Engineering, 1992
- A Universal Large-Signal Equivalent Circuit Model for the GaAs MESFETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1991
- Technology Independent Large Signal Non Quasi-Static FET Models by Direct Construction from Automatically Characterized Device DataPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1991
- A new method for determining the FET small-signal equivalent circuitIEEE Transactions on Microwave Theory and Techniques, 1988
- Optimum Design of Non Linear Power FET AmplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Computer Calculation of Large-Signal GaAs FET Amplifier CharacteristicsIEEE Transactions on Microwave Theory and Techniques, 1985
- Determination of the Basic Device Parameters of a GaAs MESFETBell System Technical Journal, 1979