Statistical modeling of GaAs MESFETs
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 87-90 vol.1
- https://doi.org/10.1109/mwsym.1991.146931
Abstract
The authors contrast the statistical extraction of GaAs MESFET equivalent circuit model parameters and physical model parameters from wafer measurements. It is observed that the equivalent-circuit model of A. Materka and T. Kacprzak (1985) provides a better match for individual devices but the model based on physical parameters of P.H. Ladbrooke (1989) provides a better estimate of device statistics. It is also shown that the Materka and Kacprzak equivalent-circuit model can accurately fit the data from which the model parameters are extracted, because it has fewer constraints than the physical model.Keywords
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