Properties of FET parameter statistical data bases
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 567-570 vol.1
- https://doi.org/10.1109/mwsym.1990.99644
Abstract
Statistical databases are often used to characterize the statistics of a FET. It is shown that a database containing the FET model parameter marginal probability density functions and covariance matrix is not sufficient to describe the FET's S-parameter statistics. This result is important to those developing statistical databases for GaAs FETs. The implications of this work for simulation and CAD are discussed, and a solution to this problem, the truth model, is presented.Keywords
This publication has 3 references indexed in Scilit:
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