Si diffusion in Al during implantation as probed by the (p, γ) resonance broadening
- 1 April 1976
- journal article
- research article
- Published by Elsevier in Thin Solid Films
- Vol. 33 (2) , L13-L14
- https://doi.org/10.1016/0040-6090(76)90089-4
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Energy levels of A = 21−44 nuclei (V)Nuclear Physics A, 1973
- Radiation-enhanced diffusion of boron in germanium during ion implantationRadiation Effects, 1973
- Diffusivity and Solubility of Si in the Al Metallization of Integrated CircuitsApplied Physics Letters, 1971