Growth kinetics of NiSi on (100) and (111) silicon
- 14 May 1984
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 17 (5) , L77-L81
- https://doi.org/10.1088/0022-3727/17/5/002
Abstract
The interaction of Ni film deposited on Si has been studied. Growth kinetics of NiSi on (111) and (100) silicon single crystals are reported. Activation energies for NiSi are found to be 1.23 eV for (100) and 1.83 eV for (111).Keywords
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