Recombination at GaAs surfaces and GaAs/AlGaAs interfaces probed by in situ photoluminescence
- 1 October 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (7) , 3632-3635
- https://doi.org/10.1063/1.349210
Abstract
We use in situphotoluminescence (PL) to investigate recombination at (100)GaAs surfaces and GaAs/AlGaAs interfaces in a controlled crystal growth environment. PL was monitored for different GaAssurface reconstructions, after surface chemical modification, and during early stages of AlGaAsheteroepitaxy. Depositing ∼1 ML of Se to form a (2×1) surface increased the GaAs PL intensity 200 times. Surprisingly, it required 6 ML (15 Å) of heteroepitaxialAlGaAs to achieve the same degree of surface passivation. We invoke lateral variations in interfacial AlGaAs composition to explain these results.This publication has 19 references indexed in Scilit:
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