Stoichiometry effects on surface properties of GaAs{100} grown in situ by MBE
- 1 September 1980
- journal article
- Published by Elsevier in Surface Science
- Vol. 99 (1) , 121-131
- https://doi.org/10.1016/0039-6028(80)90582-8
Abstract
No abstract availableKeywords
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