High resolution in situ measurement of the surface composition of InxGa1-xAs and InxAl1-xAs at growth temperature

Publisher Website

1 February 1993

journal article
Published by Elsevier in Journal of Crystal Growth

Vol. 127 (1-4) , 981-985
https://doi.org/10.1016/0022-0248(93)90772-o

Abstract

No abstract available

Keywords

HIGH RESOLUTION

This publication has 4 references indexed in Scilit:

Monolayer-scale optical investigation of segregation effects in semiconductor heterostructures
Physical Review B, 1992
Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructures
Physical Review B, 1989
High quality ultrathin InAs/GaAs quantum wells grown by standard and low-temperature modulated-fluxes molecular beam epitaxy
Applied Physics Letters, 1988
Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices
Applied Physics Letters, 1985