Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices
- 15 November 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (10) , 1099-1101
- https://doi.org/10.1063/1.96342
Abstract
InAs/GaAs superlattices with ultra‐thin InAs (few monolayer) were grown on GaAs substrates. Nucleation of InAs occurs in a two‐dimensional or a three‐dimensional way depending on the growth conditions. The physical properties: x ray, transmission electron microscopy, and photoluminescence were used to characterize the different growth processes.Keywords
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