Indirect doping as a possibility for Obtaining p-type conductivity CdS
- 16 January 1977
- journal article
- other
- Published by Wiley in Physica Status Solidi (a)
- Vol. 39 (1) , K33-K36
- https://doi.org/10.1002/pssa.2210390151
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Self-Compensation and Interaction of Li with Thermal- and Radiation-Induced Defects in CdTePhysical Review B, 1972
- Optical Studies of Shallow Acceptors in CdS and CdSePhysical Review B, 1971
- ION IMPLANTATION OF SODIUM, LITHIUM, AND NEON IN CADMIUM SULFIDEApplied Physics Letters, 1970
- Properties of Ion-Implanted Bi in CdSJournal of Applied Physics, 1969
- Changes in the Properties of Semiconductors Due to Bombardment with Fast Electrons, Gamma Rays, Neutrons, and Heavy Charged ParticlesPublished by Springer Nature ,1965
- Displacement of the Cadmium Atom in Single Crystal CdS by Electron BombardmentPhysical Review B, 1962
- Displacement of the Sulfur Atom in CdS by Electron BombardmentJournal of Applied Physics, 1960
- Cross Sections for Atomic Displacements in Solids by Gamma RaysJournal of Applied Physics, 1959