Ineffectiveness of low-high junctions in optimized solar cell designs
- 31 March 1982
- journal article
- Published by Elsevier in Solar Cells
- Vol. 5 (3) , 275-292
- https://doi.org/10.1016/0379-6787(82)90044-8
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Analysis of high-efficiency silicon solar cellsIEEE Transactions on Electron Devices, 1981
- The degradation of high-intensity BSF solar-cell fill factors due to a loss of base conductivity modulationIEEE Transactions on Electron Devices, 1981
- Comparison of solar cell performance to calculations using different energy band-gap narrowing modelsApplied Physics Letters, 1980
- High-efficiency p+-n-n+ back-surface-field silicon solar cellsApplied Physics Letters, 1978
- Auger coefficients for highly doped and highly excited siliconApplied Physics Letters, 1977
- Theoretical effects of surface diffused region lifetime models on silicon solar cellsSolid-State Electronics, 1977
- Measurements of bandgap narrowing in Si bipolar transistorsSolid-State Electronics, 1976
- Electron mobility empirically related to the phosphorus concentration in siliconSolid-State Electronics, 1975
- Transport equations in heavy doped siliconIEEE Transactions on Electron Devices, 1973
- Optical Constants of Silicon in the Region 1 to 10 evPhysical Review B, 1960