Electron mobility empirically related to the phosphorus concentration in silicon
- 1 June 1975
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 18 (6) , 579-580
- https://doi.org/10.1016/0038-1101(75)90036-2
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Relationship between resistivity and phosphorus concentration in siliconJournal of Applied Physics, 1974
- Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°KSolid-State Electronics, 1968
- Electrical Properties of Heavily Doped SiliconJournal of Applied Physics, 1963
- Resistivity of Bulk Silicon and of Diffused Layers in SiliconBell System Technical Journal, 1962
- Detailed analysis of thin phosphorus-diffused layers in p-type siliconSolid-State Electronics, 1961
- Electron Mobilities and Tunneling Currents in SiliconJournal of Applied Physics, 1961