Relationship between resistivity and phosphorus concentration in silicon
- 1 October 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (10) , 4576-4580
- https://doi.org/10.1063/1.1663091
Abstract
Accurate electrical and analytical measurements allowed us to determine a relationship between resistivity and phosphorus concentration in doped silicon. This relationship is compared with that obtained by other authors in the case of n‐type silicon, and the differences due to the various doping agents are discussed. Differences between concentrations determined by analytical techniques and by Hall effect measurements are reported.This publication has 14 references indexed in Scilit:
- Lattice parameter study of silicon uniformly doped with boron and phosphorusJournal of Materials Science, 1974
- A compilation of second order reaction interferencesJournal of Radioanalytical and Nuclear Chemistry, 1969
- Measurement of .beta.-emitting nuclides using Cerenkov radiationAnalytical Chemistry, 1969
- Temperature coefficient of resistivity of silicon and germanium near room temperatureSolid-State Electronics, 1968
- Electrical Properties of Heavily Doped SiliconJournal of Applied Physics, 1963
- Resistivity of Bulk Silicon and of Diffused Layers in SiliconBell System Technical Journal, 1962
- Electron Mobilities and Tunneling Currents in SiliconJournal of Applied Physics, 1961
- The Potentials of Infinite Systems of Sources and Numerical Solutions of Problems in Semiconductor EngineeringBell System Technical Journal, 1955
- Theory of the Electrical Properties of Germanium and SiliconPublished by Elsevier ,1955
- Resistivity Measurements on Germanium for TransistorsProceedings of the IRE, 1954