Temperature coefficient of resistivity of silicon and germanium near room temperature
- 31 July 1968
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 11 (7) , 639-646
- https://doi.org/10.1016/0038-1101(68)90065-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Electrical Properties of Heavily Doped SiliconJournal of Applied Physics, 1963
- The accuracy of four-probe resistivity measurements on siliconBritish Journal of Applied Physics, 1962
- Measurement of the hall effect and conductivity of super-pure siliconJournal of Physics and Chemistry of Solids, 1959
- The Temperature Dependence of the Low-level Lifetime and Conductivity Mobility of Carriers in Silicon†Journal of Electronics and Control, 1959
- Weak-Field Magnetoresistance in-Type SiliconPhysical Review B, 1958
- Electrical Properties of-Type GermaniumPhysical Review B, 1954