The Temperature Dependence of the Low-level Lifetime and Conductivity Mobility of Carriers in Silicon†
- 1 August 1959
- journal article
- research article
- Published by Taylor & Francis in Journal of Electronics and Control
- Vol. 7 (2) , 112-122
- https://doi.org/10.1080/00207215908937192
Abstract
The temperature dependence of tho low-level lifetime in silicon has been found to be consistent with that expected from the theory based on a low level of injection, a low density of recombination centres and a single energy level for the recombination centres. The temparature dependence of the conductivity mobility has also been determined.Keywords
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