Lattice parameter study of silicon uniformly doped with boron and phosphorus

This publication has 26 references indexed in Scilit:

• The lattice contraction coefficient of boron and phosphorus in silicon
  Solid-State Electronics, 1972
• Carrier Profile Change for Phosphorus-Diffused Layers on Low-Temperature Heat Treatment
  Applied Physics Letters, 1971
• Precise Cell Parameters of Semiconductor Crystals and Their Applications
  Published by Springer Nature ,1969
• X-ray measurement of elastic strain and lattice constant of diffused silicon
  Solid-State Electronics, 1967
• Resistivity of Bulk Silicon and of Diffused Layers in Silicon
  Bell System Technical Journal, 1962
• Detailed analysis of thin phosphorus-diffused layers in p-type silicon
  Solid-State Electronics, 1961
• Precision lattice constant determination
  Acta Crystallographica, 1960
• Solid Solubilities of Impurity Elements in Germanium and Silicon*
  Bell System Technical Journal, 1960
• Densitometric and Electrical Investigation of Boron in Silicon
  Physical Review B, 1955
• Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
  Physical Review B, 1949