Substrate Temperature Dependence of Carbon Incorporation into GaAs Grown by MBE Using Triethylgallium and As4
- 1 May 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (5A) , L738
- https://doi.org/10.1143/jjap.28.l738
Abstract
We have studied the substrate temperature dependence of carbon incorporation into undoped GaAs epitaxial layers grown by molecular beam epitaxy using triethylgallium and arsenic (As4). In the temperature range from 430°C to 680°C, samples show p-type conductivity with carbon as the residual impurity, which is measured by secondary ion mass spectroscopy. The lowest values of carrier and carbon impurity concentration are obtained at 550°C. The mechanism of carbon incorporation into the GaAs epitaxial layers grown using TEG and As4 is discussed.Keywords
This publication has 9 references indexed in Scilit:
- Highly Uniform, High-Purity GaAs Epitaxial Layer Grown by MBE Using Triethylgallium and ArsenicJapanese Journal of Applied Physics, 1988
- Chemical beam epitaxial growth of high-purity GaAs using triethylgallium and arsineApplied Physics Letters, 1987
- Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and As4Japanese Journal of Applied Physics, 1987
- Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and ArsineJapanese Journal of Applied Physics, 1986
- Thermodynamic analysis of molecular beam epitaxy of III–V semiconductorsJournal of Crystal Growth, 1986
- A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAsJournal of Crystal Growth, 1986
- Metalorganic Molecular-Beam Epitaxial Growth and Characterization of GaAs Using Trimethyl- and Triethyl-Gallium SourcesJapanese Journal of Applied Physics, 1985
- Two-stage arsenic cracking source with integral getter pump for MBE growthJournal of Vacuum Science & Technology B, 1983
- Simple empirical relationship between mobility and carrier concentrationElectronics Letters, 1974