Highly Uniform, High-Purity GaAs Epitaxial Layer Grown by MBE Using Triethylgallium and Arsenic
- 1 June 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (6A) , L1144
- https://doi.org/10.1143/jjap.27.l1144
Abstract
We studied the growth of undoped GaAs epitaxial layers by molecular beam epitaxy using triethylgallium (TEG) and arsenic (As4). The variations in layer thickness over the 3-inch GaAs substrate decreased as the TEG flow rate increased. The carrier concentration of the undoped GaAs epilayer decreased as the As4 pressure increased at a constant TEG flow rate and the material converted from p- to n-type conductivity. The Hall mobility of the free carriers in the n-type film was 81,300 cm2/Vs (77 K) at a carrier concentration of n=4.1×1014 cm-3. This indicates a low level of compensation in the epilayer.Keywords
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