Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy
- 7 October 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (15) , 2863-2865
- https://doi.org/10.1063/1.1513182
Abstract
The surface segregation of indium (In) atoms was investigated during the growth of InGaAs layers by reflection high-energy electron diffraction (RHEED). We observed that the decay constant of the RHEED-oscillation amplitude during growth depends on the growth conditions and is related, in a very simple way, to the segregation coefficient of the In atoms in the InGaAs layers.Keywords
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