Strain relaxation and segregation effects during self-assembled InAs quantum dots formation on GaAs(001)
- 17 July 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (3) , 409-411
- https://doi.org/10.1063/1.126992
Abstract
In segregation effects during InAs growth on GaAs(001) and critical thickness for InAs self-assembled quantum dots are studied using a real time, in situ technique capable of measuring accumulated stress during growth. Due to a large (∼50%) surface In segregation of floating In, self-assembled dot formation takes place when less than one monolayer of InAs is pseudomorphically grown on GaAs. A picture of the growth process is discussed on the basis of the equilibrium between InAs and floating In dominated by the stress energy.Keywords
This publication has 15 references indexed in Scilit:
- In situ observation of reconstruction related surface stress during molecular beam epitaxy (MBE) growth of III–V compoundsJournal of Crystal Growth, 1999
- Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectorsApplied Physics Letters, 1998
- Electronic states tuning of InAs self-assembled quantum dotsApplied Physics Letters, 1998
- Intermixing and shape changes during the formation of InAs self-assembled quantum dotsApplied Physics Letters, 1997
- Gain and differential gain of single layer InAs/GaAs quantum dot injection lasersApplied Physics Letters, 1996
- InAs monolayers and quantum dots in a crystalline GaAs matrixSemiconductor Science and Technology, 1993
- In situ probing at the growth temperature of the surface composition of (InGa)As and (InAl)AsApplied Physics Letters, 1992
- Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wellsApplied Physics Letters, 1992
- Effect of indium replacement by gallium on the energy gaps of InAs/GaAs thin-layer structuresJournal of Applied Physics, 1991
- Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructuresPhysical Review B, 1989