In situ probing at the growth temperature of the surface composition of (InGa)As and (InAl)As
- 26 October 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (17) , 2096-2098
- https://doi.org/10.1063/1.108318
Abstract
A sudden shift from a bidimensional to a three‐dimensional growth mode is observed when InAs is deposited by molecular‐beam epitaxy on a pseudomorphic buffer layer grown on GaAs. The critical thickness for this shift is merely sensitive to the indium composition of the surface monolayer prior to growth. This property allows a direct in situ probing of the surface composition at the temperature of the growth. A detailed quantitative study of the surface segregation of indium atoms is performed for (InGa)As and (InAl)As alloys.Keywords
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