Growth of epitaxial NdNiO3 and integration with Si(100)
- 25 February 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (8) , 1337-1339
- https://doi.org/10.1063/1.1451984
Abstract
We have grown epitaxial NdNiO3 films on Si(100) substrate under ambient oxygen pressure using a pulsed-laser deposition method. The integration of NdNiO3 with Si(100) was accomplished by lattice-matching epitaxy of MgO and SrTiO3 and domain matching epitaxy of TiN on Si(100). During domain matching epitaxy, four lattice constants of TiN match with three of silicon across the TiN/Si(100) interface. High-quality epitaxial NdNiO3 film on SrTiO3/MgO/TiN/Si(100) showed a very sharp metal–insulator (MI) phase transition at 200 K. Observed MI transition in epitaxial NdNiO3 is much sharper than that usually observed in bulk and polycrystalline films with more than four orders of magnitude change in resistivity. This MI transition is understood to arise because of the opening of charge transfer gap between Ni3+(3d) and O2−(2p) band.Keywords
This publication has 14 references indexed in Scilit:
- Transport properties of NdNiO3 thin films made by pulsed-laser depositionJournal of Applied Physics, 2000
- Electrical transport inJournal of Physics: Condensed Matter, 1999
- Effect of oxygen stoichiometry on the electrical resistivity behaviour of NdNiO3−δSolid State Communications, 1998
- Thickness dependence of magnetoresistance in La–Ca–Mn–O epitaxial filmsApplied Physics Letters, 1995
- Metallic state and the metal-insulator transition ofPhysical Review B, 1993
- Resisitivity, thermopower, and susceptibility ofR(R=La,Pr)Physical Review B, 1993
- Extraordinary pressure dependence of the metal-to-insulator transition in the charge-transfer compounds NdNiOand PrNiOPhysical Review B, 1993
- Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor depositionApplied Physics Letters, 1992
- Systematic study of insulator-metal transitions in perovskites RNiO3 (R=Pr,Nd,Sm,Eu) due to closing of charge-transfer gapPhysical Review B, 1992
- Sur une série de composés oxygènes du nickel trivalent derivés de la perovskiteJournal of Solid State Chemistry, 1971