Transport properties of NdNiO3 thin films made by pulsed-laser deposition
- 1 January 2000
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 87 (1) , 606-608
- https://doi.org/10.1063/1.371912
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Charge Disproportionation inPerovskites: Simultaneous Metal-Insulator and Structural Transition inPhysical Review Letters, 1999
- GiantIsotope Effect on the Metal-Insulator Transition ofPerovskites (Rare Earth)Physical Review Letters, 1998
- Evidence for electron-lattice coupling in RNiO3 perovskitesPhysica B: Condensed Matter, 1997
- Metallic state and the metal-insulator transition ofPhysical Review B, 1993
- Extraordinary pressure dependence of the metal-to-insulator transition in the charge-transfer compounds NdNiOand PrNiOPhysical Review B, 1993
- Pressure dependence of the metal-insulator transition in the charge-transfer oxides R (R=Pr,Nd,)Physical Review B, 1993
- Systematic study of insulator-metal transitions in perovskites RNiO3 (R=Pr,Nd,Sm,Eu) due to closing of charge-transfer gapPhysical Review B, 1992
- Synthesis, crystal structure, and properties of metallic PrNiO3: Comparison with metallic NdNiO3 and semiconducting SmNiO3Journal of Solid State Chemistry, 1991
- Band gaps and electronic structure of transition-metal compoundsPhysical Review Letters, 1985
- Sur une série de composés oxygènes du nickel trivalent derivés de la perovskiteJournal of Solid State Chemistry, 1971