AlAs/GaAs tunnel emitter bipolar transistor

29 May 1989

journal article
conference paper
Published by AIP Publishing in Applied Physics Letters

Vol. 54 (22) , 2250-2252
https://doi.org/10.1063/1.101139

Abstract

We report the first microwave AlAs/GaAs tunnel emitter bipolar transistor utilizing nonequilibrium electron transport in the base. At an emitter current density of 1×10⁵ A cm⁻², current gain of greater than unity is measured up to a frequency of 40 GHz. dc current gains of 82 and 53 are measured for devices with emitter stripe widths of 9 and 1.5 μm, respectively. Enhanced device scaling is made possible with the extremely high velocity in the thin base region.

Keywords

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