Attainment of transparent boron-implanted layers for silicon solar cell applications
- 1 October 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (7) , 731-732
- https://doi.org/10.1063/1.96019
Abstract
The formation of boron-doped p+ layers that are transparent to minority-carrier transport is reported. Ion implantation is used to limit the peak dopant concentration to 5×1018 cm−3 so as to avoid deleterious heavy doping effects. Solar cell open circuit voltage of 657 mV has been obtained in this way. The importance of surface passivation is indicated.Keywords
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