A simple method for the determination of impurity concentrations and profiles in semiconductors
- 1 May 1970
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 13 (5) , 710-713
- https://doi.org/10.1016/0038-1101(70)90149-8
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- A technique for directly plotting the inverse doping profile of semiconductor wafersIEEE Transactions on Electron Devices, 1969
- Computer Study of Bulk GaAs Devices with Random One-Dimensional Doping FluctuationsJournal of Applied Physics, 1968
- Measurement of donor density by pulsing Schottky-barrier diodesElectronics Letters, 1968