High-temperature annealings of Sb and Sb/B heavily implanted silicon wafers studied by near grazing incidence fluorescence extended x-ray absorption fine structure

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Abstract
The local atomic environment of the Sb dopant in 2 and 5X10(16) ions/cm(2) implanted Si samples has been studied by near grazing incidence fluorescence extended x-ray absorption fine structure at different stages of the Sb deactivation process. The annealings were performed at high temperature (900-1000 degrees C) during various periods: 30 s-4 h. The Sb out-diffusion and the high percentage of Sb precipitates are put into evidence especially for Sb-only implanted samples. The comparison of the Sb and B codiffusion data with the corresponding ones obtained by the diffusion of Sb alone revealed several anomalous effects due to dopant interaction. Moreover, a simulation program including dopant precipitation and donor-acceptor pairing allows us to foresee most of the anomalous phenomena occurring in high-concentration codiffusion experiments. (C) 1996 American Institute of Physics