Micrometer-scale ballistic transport in encapsulated graphene at room temperature

Preprint

10 June 2011

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.1103.4510

Abstract

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport on a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.

Keywords

GRAPHENE ENCAPSULATED
BALLISTIC TRANSPORT
MICROMETER SCALE
SCALE BALLISTIC
RESISTANCE
NITRIDE
BORON

All Related Versions

Version 1, 2011-03-23, ArXiv
Version 2, 2011-05-17, ArXiv
Version 3, 2011-06-10, ArXiv
Published version: Nano Letters, 11 (6), 2396.

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