Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature
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- 16 May 2011
- journal article
- letter
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 11 (6) , 2396-2399
- https://doi.org/10.1021/nl200758b
Abstract
Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport at a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.Keywords
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