Three-band Hubbard model: A Monte Carlo study

Abstract
We have studied a two-dimensional multiband Hubbard model describing CuO2 sheets in the high-Tc oxides. The simulations were performed for a grand-canonical ensemble on lattice sizes up to 16 unit cells of three atoms each and temperatures down to kBTt/30, where t is the Cu-O hybridization. For generally accepted values of the Hubbard coupling on the Cu sites Ud≳6t, two different regimes can be distinguished in the magnetic properties of the model. In the half-filled band case we see for Δ>Ud/2 (Δ=ɛp-ɛd being the charge-transfer energy) the formation of a correlation gap, as expected for a charge-transfer insulator. For Δ<Ud/2, on the other hand, no gap is visible in the considered temperature region. In this (mixed-valence) situation only a very weak dependence of the magnetic structure form factor on doping is obtained, in contrast to the charge-transfer situation, where a strong decrease of the same quantity is observed for very low concentrations of dopant holes (δ≲0.05). The existence of antiferromagnetic long-range order in the two different parameter regions is studied with finite-size scaling in the low-temperature regime. We also investigated the possibility of singlet formation between O holes and the Cu hole on one plaquette, as suggested by Zhang and Rice. The amplitude squared of such a singlet increases strongly as a function of doping, reaching saturation at δ≃0.2. Finally, we find evidence for an attractive pairing interaction only in the extended s-wave channel for δ=0.2 and β≳4/t, although no phase transition to a superconducting state could be seen.