Luminescence Spectra Due to Exciton-Exciton Collisions in Semiconductors. I. Spontaneous Emission Spectra

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Abstract
Spontaneous emission spectra are calculated for typical radiative exciton-exciton collision processes at various temperatures. A suitably weighted δ-function of the inter-exciton separation is employed as the effective interaction potential, and numerical evaluations are performed with the band parameters of GaAs. The results describe well the band shape of the emission due to exciton-exciton collisions in GaAs which dominates the luminescence under intense nitrogen-laser excitation at low temperatures.