Excitonic gain and stimulated emission in ZnSe-based quantum wells up to room temperature
- 1 January 1992
- journal article
- Published by Elsevier in Surface Science
- Vol. 267 (1-3) , 616-622
- https://doi.org/10.1016/0039-6028(92)91211-s
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Stimulated emission via inelastic exciton-exciton scattering in ZnSe epilayersApplied Physics Letters, 1991
- Room-temperature exciton absorption in (Zn,Cd)Se/ZnSe quantum wells at blue-green wavelengthsApplied Physics Letters, 1990
- Band offsets and exciton confinement in Zn1−yCdySe/Zn1−xMnxSe quantum wellsApplied Physics Letters, 1990
- Molecular beam epitaxy of Zn1−xCdxSe epilayers and ZnSe/Zn1−xCdxSe superlatticesApplied Physics Letters, 1990
- Linear and nonlinear optical properties of semiconductor quantum wellsAdvances in Physics, 1989
- Blue Shift of the Exciton Resonance due to Exciton-Exciton Interactions in a Multiple-Quantum-Well StructurePhysical Review Letters, 1984
- Optical properties of highly excited direct gap semiconductorsPhysics Reports, 1981
- Exciton-exciton interaction and laser emission in high-purity ZnOSolid State Communications, 1973