Molecular beam epitaxy of Zn1−xCdxSe epilayers and ZnSe/Zn1−xCdxSe superlattices
- 19 March 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (12) , 1163-1165
- https://doi.org/10.1063/1.102550
Abstract
We have investigated the epitaxial growth of Zn1−x CdxSe epilayers and ZnSe/Zn1−x CdxSe superlattices (0≤x≤1) on (100)GaAs. Although thick epilayers of Zn1−x CdxSe are prone to defect formation with increasing Cd content, the structural and optical characteristics improve remarkably when Zn1−x CdxSe is in the form of thin layers within ZnSe/Zn1−x CdxSe superlattices. High quality superlattices can be grown for x≤0.35. The characterization of these systems using transmission electron microscopy, x-ray diffraction, reflectivity, and photoluminescence is reported.Keywords
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