Anomalous critical current in double-barrier Nb/Al–AlOx–Al–AlOx–Nb devices
- 15 March 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (11) , 1624-1626
- https://doi.org/10.1063/1.123637
Abstract
Double-barrier Nb/Al–AlOx–Al–AlOx–Nb devices with a “dirty” middle Al layer were fabricated and investigated. An anomalously large Josephson critical current at low temperatures and a nonmonotonic dependence of the device resistance on the thickness of the middle Al layer were found.Keywords
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