Accuracy of various theories of band-gap narrowing inp-doped semiconductors

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Abstract
We analyze band-gap narrowing in p-doped zinc-blende-structure semiconductors with the aid of a newly developed analytic expression for the valence-band dielectric function. We also investigate the accuracy of band-gap calculations involving the plasmon-pole and damped-plasmon-pole dielectric functions as well as of expressions for the band-gap shift based on theories of plasma exchange and correlation energies. In the particular case of GaAs, we obtain good agreement among the results of the various approaches with the exception of a recently suggested classical approximation for the band-gap energy shift.