Gap Shift in Doped Semiconductors at Finite Temperatures
- 1 August 1985
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 130 (2) , 661-673
- https://doi.org/10.1002/pssb.2221300230
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Photoluminescence and excitation spectroscopy in heavily doped- and-type siliconPhysical Review B, 1984
- Theory of Electron–Hole Liquid in Doped Semiconductors. Application to GaPPhysica Status Solidi (b), 1983
- Band-gap narrowing from luminescence in p-type SiJournal of Applied Physics, 1983
- Comparison of band-gap shrinkage observed in luminescence from n+-Si with that from transport and optical absorption measurementsApplied Physics Letters, 1983
- The Fermi energy and screening length in n-type GaAsCanadian Journal of Physics, 1982
- Photoluminescence in heavily doped Si: B and Si: AsSolid State Communications, 1981
- Optical absorption in heavily doped siliconPhysical Review B, 1981
- On the origin of photoluminescence in heavily-doped siliconSolid State Communications, 1979
- Measurements of bandgap narrowing in Si bipolar transistorsSolid-State Electronics, 1976
- Infrared Absorption in Heavily Doped n‐Type SiPhysica Status Solidi (b), 1969