Multiplication noise in multi-heterostructure avalanche photodiodes
- 31 October 1983
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 26 (10) , 999-1003
- https://doi.org/10.1016/0038-1101(83)90076-x
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- The graded bandgap multilayer avalanche photodiode: A new low-noise detectorIEEE Electron Device Letters, 1982
- New ultra-low-noise avalanche photodiode with separated electron and hole avalanche regionsElectronics Letters, 1982
- Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratioApplied Physics Letters, 1982
- Impact ionisation in multilayered heterojunction structuresElectronics Letters, 1980
- Low-noise multistage avalanche photodetectorElectronics Letters, 1979