Thermal reaction between Pt thin films and SixGe1−x alloys

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Abstract
Thermal reaction of Pt with amorphous SixGe1−x alloys (x=0.25–0.75) was investigated in the temperature range of 200–650 °C. At low temperatures (200–400 °C), a uniform reacted layer containing a mixture of Pt2Si and Pt2Ge was produced. The reaction continued with the formation of monosilicide and monogermanide. The formation of the first phases was diffusion controlled with a measured activation energy of 1.2 eV for all the SixGe1−x alloys. At high temperatures (400–650 °C), phase separation occurred in depth with a surface layer enriched with Si and a bottom layer enriched with Ge. At the same time, the formation of PtGe2 and the crystallization of unreacted amorphous SixGe1−x were observed.