Multiple peak resonant tunneling diode for multi-valued memory
- 10 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- A/D converter using InGaAs/InAlAs resonant-tunneling diodesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Differential multiple-valued logic using resonant tunneling diodesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Eleven-bit parity generator with a single, vertically integrated resonant tunnelling deviceElectronics Letters, 1988
- Resonant tunneling device with multiple negative differential resistance: Digital and signal processing applications with reduced circuit complexityIEEE Transactions on Electron Devices, 1987
- Resonant tunneling devices with multiple negative differential resistance and demonstration of a three-state memory cell for multiple-valued logic applicationsIEEE Electron Device Letters, 1987
- Heterojunction double-barrier diodes for logic applicationsApplied Physics Letters, 1987
- The Prospects for Multivalued Logic: A Technology and Applications ViewIEEE Transactions on Computers, 1981
- Esaki Diode High-Speed Logical CircuitsIEEE Transactions on Electronic Computers, 1960