Plasma etching with surface magnetic field confinement
- 1 July 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (1) , 84-86
- https://doi.org/10.1063/1.94130
Abstract
A plasma etching reactor is described which combines a primary electron source, surface magnetic field confinement, and independently controlled substrate biasing. Preliminary measurements show that the reactor produces a large volume of dense plasma at low pressure. The plasma parameters are uniform to within ±1% over the working volume, with almost no perturbing radio-frequency electric fields. Profiles can be etched into polysilicon in CF4 plasmas with etch rates ≥2000 Å/min.Keywords
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