Triode plasma etching
- 1 February 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (3) , 192-193
- https://doi.org/10.1063/1.90746
Abstract
Reactive‐plasma etching is conventionally carried out using one power supply to both generate the glow discharge and to control the flux and energy of ion bombardment on the substrate. A three‐electrode, or triode, configuration is described in which these two functions are controlled quasi‐independently; results obtained with this arrangement are described. These results are somewhat similar to those obtained with a diode RIE system, except that control of the substrate voltage allows another degree of freedom over etch rates, etch selectivity, and wall profiles.Keywords
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