Nucleation, Relaxation and Redistribution of Si Layers in GaAs
- 1 January 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (1A) , L24
- https://doi.org/10.1143/jjap.32.l24
Abstract
We study the structural properties of Si layers of different thickness (0.1-1.3 nm) inserted in GaAs by solid-source molecular beam epitaxy. Using high-resolution electron microscopy, we demonstrate that the Si nucleation on GaAs takes place via the formation of Si nanoclusters in a highly regular arrangement. Thicker films (several monolayers) are found to be partially intermixed with GaAs. This intermixing is caused by the segregation of a considerable fraction of the deposited Si during overgrowth, as observed by secondary ion mass spectrometry. Finally, we show that the strain relief of Si films on GaAs occurs at a thickness of about 1.2 nm via the generation of stacking faults, whereas complete dislocations are not detected.Keywords
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