Tuning AlAs-GaAs band discontinuities and the role of Si-induced local interface dipoles
- 15 January 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 43 (3) , 2450-2453
- https://doi.org/10.1103/physrevb.43.2450
Abstract
The presence of thin ordered layers of Si within the interface region of AlAs-GaAs heterostructures is found to tune the valence-band offset throughout the 0.02–0.78 eV range. High-resolution x-ray-photoemission studies of heterostructures prepared in situ by molecular-beam epitaxy as a function of substrate temperature, arsenic flux, interface concentration of Si, and growth sequence (AlAs on GaAs versus GaAs on AlAs) indicate that this tunability is associated with a Si-related local dipole which can be added to or subtracted from the intrinsic AlAs-GaAs valence-band offset of 0.40 eV.Keywords
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