Doping interface dipoles: Tunable heterojunction barrier heights and band-edge discontinuities by molecular beam epitaxy
- 1 April 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (7) , 664-666
- https://doi.org/10.1063/1.95521
Abstract
We have succeeded for the first time in artificially tuning the conduction and valence‐band barrier heights at an abrupt intrinsic semiconductor‐semiconductor heterojunction via a doping interface dipole (DID). This is achieved by means of ultrathin ionized donor and acceptor sheets in situ grown within ≲100 Å from the heterointerface by molecular beam epitaxy. In the limit of a few atomic layers separation between the charge sheets this amounts to modify the effective band‐edge discontinuities. A near one order of magnitude enhancement in the photocollection efficiency of an abrupt AlGaAs/GaAs heterojunction has been observed as result of the conduction‐band barrier lowering induced by the DID.Keywords
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