New device applications of bandedge discontinuities in multilayer heterojunction structures

This publication has 13 references indexed in Scilit:

• Fast switching and storage in GaAs—Al_xGa_1-xAs heterojunction layers
  IEEE Electron Device Letters, 1982
• Demonstration of a new oscillator based on real-space transfer in heterojunctions
  Applied Physics Letters, 1982
• The graded bandgap multilayer avalanche photodiode: A new low-noise detector
  IEEE Electron Device Letters, 1982
• Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio
  Applied Physics Letters, 1982
• Measurements of hot-electron conduction and real-space transfer in GaAs-AlxGa1−xAs heterojunction layers
  Applied Physics Letters, 1981
• Impact ionisation in multilayered heterojunction structures
  Electronics Letters, 1980
• Evidence for tunneling in reverse-biased III-V photodetector diodes
  Applied Physics Letters, 1980
• Negative differential resistance through real-space electron transfer
  Applied Physics Letters, 1979
• Electron mobilities in modulation-doped semiconductor heterojunction superlattices
  Applied Physics Letters, 1978
• Multiplication noise in uniform avalanche diodes
  IEEE Transactions on Electron Devices, 1966