Transmission Electron Microscopic Observation of Microdefects in Zn+-Implanted GaAs
- 1 October 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (10R)
- https://doi.org/10.1143/jjap.24.1274
Abstract
Transmission electron microscopic (TEM) observation of GaAs implanted with 100 keV Zn+ ions to 1014 ∼1015 ions/cm2 and annealed at 650 ∼950^°C by capless annealing in As ambient revealed precipitates, stacking-fault tetrahedra (SFTs) and stacking-fault pyramids (SFPs). The precipitates, distributed from near R p to greater depths, consisted of non-crystalline material of mean inner potential smaller than that of GaAs. Defects showing black-white contrast were found to be SFTs accompanied by a precipitate or SFPs. Two types of SFTs can be differentiated by the core structure of their stair-rod dislocations. Most of the SFTs observed were identified as β-SFTs, and very few SFPs were observed.Keywords
This publication has 30 references indexed in Scilit:
- Characteristics of Ion‐Implantation Damage and Annealing Phenomena in SemiconductorsJournal of the Electrochemical Society, 1984
- Formation of Gallium Nitride at the Interface between Silicon Nitride Encapsulant and Ion Implanted GaAsJapanese Journal of Applied Physics, 1983
- Near surface analysis of ion implanted dopants in gallium arsenide using RBS, PIXE, and TEMApplications of Surface Science, 1983
- Effect of oxygen on chromium-structural defects interaction in ion-implanted gallium arsenideJournal of Applied Physics, 1982
- The material state of ion-implanted Cr in GaAsJournal of Applied Physics, 1982
- Stacking fault energy and ionicity of cubic III–V compoundsPhysica Status Solidi (a), 1978
- Study of Encapsulants for Annealing GaAsJournal of the Electrochemical Society, 1977
- The nature of stacking fault pyramids in {100} epitaxial siliconPhysica Status Solidi (a), 1975
- Electron microscope investigation of damage structure in gallium-arsenide bombarded with neon ionsRadiation Effects, 1969
- Direct observations of defects in quenched goldPhilosophical Magazine, 1959