Tunnel contribution to Hg1−xCdxTe and Pb1−xSnxTe p−n junction diode characteristics
- 30 November 1980
- journal article
- Published by Elsevier in Infrared Physics
- Vol. 20 (6) , 353-361
- https://doi.org/10.1016/0020-0891(80)90052-4
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
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