0.1 ev HgCdTe photodetectors
- 31 May 1975
- journal article
- Published by Elsevier in Infrared Physics
- Vol. 15 (2) , 111-124
- https://doi.org/10.1016/0020-0891(75)90019-6
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Recombination mechanisms in 8–14-μ HgCdTeJournal of Applied Physics, 1973
- Epitaxial (CdHg)Te Infrared Photovoltaic DetectorsApplied Physics Letters, 1971
- Field-Effect Measurements on the HgCdTe SurfaceJournal of Applied Physics, 1970
- Intrinsic Carrier Concentration of Hg1−xCdxTe as a Function of x and T Using k·p CalculationsJournal of Applied Physics, 1970
- Sensitivity limits of 0.1 eV intrinsic photoconductorsInfrared Physics, 1968
- CdxHg1−xTe INFRARED PHOTOVOLTAIC DETECTORSApplied Physics Letters, 1967
- Carrier density fluctuations in semiconductors and photoconductors with one kind of trapping centersPhysica, 1960
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952